AP80T10GP MOSFET Transistor

The AP80T10GP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP80T10GP transistor as follows.

AP80T10GP Transistor Specification

Transistor Code		AP80T10GP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	166W
Drain-Source Capacitance		550pF
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		5V

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