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AP70T03GJB MOSFET Transistor

The AP70T03GJB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP70T03GJB transistor as follows.

Circuit diagram symbol of the AP70T03GJB transistor

AP70T03GJB Transistor Specification

Transistor Code AP70T03GJB
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251S
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 53W
Drain-Source Capacitance 245pF
Rise Time 105nS
Gate-Threshold Voltage (Maximum) 3V

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