AP6N3R2P MOSFET Transistor

The AP6N3R2P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N3R2P transistor as follows.

AP6N3R2P Transistor Specification

Transistor Code		AP6N3R2P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	138.8W
Drain-Source Capacitance		3670pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		5V

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