AP65PN2R6P MOSFET Transistor

The AP65PN2R6P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP65PN2R6P transistor as follows.

AP65PN2R6P Transistor Specification

Transistor Code		AP65PN2R6P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.6Ohm
Power Dissipation (Maximum)	PD	56.8W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		5V

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