AP5602P MOSFET Transistor

The AP5602P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP5602P transistor as follows.

AP5602P Transistor Specification

Transistor Code		AP5602P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	187.5W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		5V

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