AP50WN270IN MOSFET Transistor

The AP50WN270IN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP50WN270IN transistor as follows.

AP50WN270IN Transistor Specification

Transistor Code		AP50WN270IN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F-NL
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	41.6W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		53nS
Gate-Threshold Voltage (Maximum)		4V

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