AP4N2R6S MOSFET Transistor

The AP4N2R6S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4N2R6S transistor as follows.

AP4N2R6S Transistor Specification

Transistor Code		AP4N2R6S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	150A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		720pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		63nS
Gate-Threshold Voltage (Maximum)		5V

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