AP4506GEM MOSFET Transistor

The AP4506GEM is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4506GEM transistor as follows.

AP4506GEM Transistor Specification

Transistor Code		AP4506GEM
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		100pF
Rise Time		5.6nS
Gate-Threshold Voltage (Maximum)		3V

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