AP4506GEH MOSFET Transistor

The AP4506GEH is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP4506GEH transistor as follows.

AP4506GEH Transistor Specification

Transistor Code		AP4506GEH
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TO252-4L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9(8)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024(0.036)Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		100(220)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18(16)nS
Gate-Threshold Voltage (Maximum)		3V

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