AP3N4R5M MOSFET Transistor

The AP3N4R5M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3N4R5M transistor as follows.

AP3N4R5M Transistor Specification

Transistor Code		AP3N4R5M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1000pF
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V

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