AP3B026M MOSFET Transistor

The AP3B026M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3B026M transistor as follows.

AP3B026M Transistor Specification

Transistor Code		AP3B026M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		285pF
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V

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