AP3990W MOSFET Transistor

The AP3990W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3990W transistor as follows.

AP3990W Transistor Specification

Transistor Code		AP3990W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	174W
Drain-Source Capacitance		225pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Total Gate Charge		34nC

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