AP3989R MOSFET Transistor

The AP3989R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3989R transistor as follows.

AP3989R Transistor Specification

Transistor Code		AP3989R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.68Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		355pF
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V

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