AP30P10GI MOSFET Transistor

The AP30P10GI is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP30P10GI transistor as follows.

AP30P10GI Transistor Specification

Transistor Code		AP30P10GI
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	31.3W
Drain-Source Capacitance		185pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		50nC

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