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AP2N3R7LYT MOSFET Transistor

The AP2N3R7LYT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2N3R7LYT transistor as follows.

Circuit diagram symbol of the AP2N3R7LYT transistor

AP2N3R7LYT Transistor Specification

Transistor Code AP2N3R7LYT
Transistor Type MOSFET
Control Channel Type N-Channel
Package PMPAK3X3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 23.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0037Ohm
Power Dissipation (Maximum) PD 3.13W
Drain-Source Capacitance 780pF
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 1.5V

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