The AP2N3R7LYT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the AP2N3R7LYT transistor as follows.
Transistor Code | AP2N3R7LYT | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | PMPAK3X3 | |
Drain-Source Voltage (Maximum) | VDS | 20V |
Gate-Source Voltage (Maximum) | VGS | 12V |
Drain Current (Maximum) | ID | 23.4A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0037Ohm |
Power Dissipation (Maximum) | PD | 3.13W |
Drain-Source Capacitance | 780pF | |
Rise Time | 20nS | |
Gate-Threshold Voltage (Maximum) | 1.5V |
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