AP10TN6R0P MOSFET Transistor

The AP10TN6R0P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10TN6R0P transistor as follows.

AP10TN6R0P Transistor Specification

Transistor Code		AP10TN6R0P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Transistor SMD Code		10TN6R0
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	95A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		630pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		4V

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