AP10N012H MOSFET Transistor

The AP10N012H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10N012H transistor as follows.

AP10N012H Transistor Specification

Transistor Code		AP10N012H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Transistor SMD Code		10N012
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		5V

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