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AP10A185M MOSFET Transistor

The AP10A185M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10A185M transistor as follows.

Circuit diagram symbol of the AP10A185M transistor

AP10A185M Transistor Specification

Transistor Code AP10A185M
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.185Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 40pF
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 3V

AP10A185M MOSFET Transistor Overview

The AP10A185M is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SO8 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the AP10A185M MOSFET

Followings are the key electrical characteristics of the AP10A185M MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AP10A185M MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AP10A185M MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AP10A185M MOSFET transistor is 2.2A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AP10A185M MOSFET transistor when the transistor is fully turned on is 0.185 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AP10A185M MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the AP10A185M MOSFET transistor is 40pF. This value influences to the switching speed of the AP10A185M MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AP10A185M MOSFET transistor is switched on is 4nS. This is the rate at which AP10A185M MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the AP10A185M MOSFET transistor. You can download the official AP10A185M MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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