AOSD62666E MOSFET Transistor

The AOSD62666E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOSD62666E transistor as follows.

AOSD62666E Transistor Specification

Transistor Code		AOSD62666E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0145Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		220pF
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.2V

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