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AOSD62666E MOSFET Transistor

The AOSD62666E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOSD62666E transistor as follows.

Circuit diagram symbol of the AOSD62666E transistor

AOSD62666E Transistor Specification

Transistor Code AOSD62666E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0145Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 220pF
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 2.2V

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