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AP09T10GH MOSFET Transistor

The AP09T10GH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP09T10GH transistor as follows.

Circuit diagram symbol of the AP09T10GH transistor

AP09T10GH Transistor Specification

Transistor Code AP09T10GH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Transistor SMD Code 09T10GH
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 12.5W
Drain-Source Capacitance 30pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 3V

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