AOB25S65L MOSFET Transistor

The AOB25S65L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOB25S65L transistor as follows.

AOB25S65L Transistor Specification

Transistor Code		AOB25S65L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	357W
Drain-Source Capacitance		87pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V

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