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AFP2367S MOSFET Transistor

The AFP2367S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP2367S transistor as follows.

Circuit diagram symbol of the AFP2367S transistor

AFP2367S Transistor Specification

Transistor Code AFP2367S
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code 67*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.065Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 10nC

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