AFN4102W MOSFET Transistor

The AFN4102W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN4102W transistor as follows.

AFN4102W Transistor Specification

Transistor Code		AFN4102W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8P
Transistor SMD Code		4102W
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.158Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		4.6nC

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