AFN10N65T220FT MOSFET Transistor

The AFN10N65T220FT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN10N65T220FT transistor as follows.

AFN10N65T220FT Transistor Specification

Transistor Code		AFN10N65T220FT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		128.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		73.67nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		20nC

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