3SK113H MOSFET Transistor

The 3SK113H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3SK113H transistor as follows.

3SK113H Transistor Specification

Transistor Code		3SK113H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO131
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	6V
Drain Current (Maximum)	ID	0.08A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		1.2pF
Operating Junction Temperature (Maximum)		125°C

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