3N166 MOSFET Transistor

The 3N166 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N166 transistor as follows.

3N166 Transistor Specification

Transistor Code		3N166
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-99
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	125V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	300Ohm
Power Dissipation (Maximum)	PD	0.3W
Drain-Source Capacitance		3pF
Operating Junction Temperature (Maximum)		150°C

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