2SK579S MOSFET Transistor

The 2SK579S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK579S transistor as follows.

2SK579S Transistor Specification

Transistor Code		2SK579S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	450V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.5Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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