2SJ626 MOSFET Transistor

The 2SJ626 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ626 transistor as follows.

2SJ626 Transistor Specification

Transistor Code		2SJ626
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC96
Transistor SMD Code		XN
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.388Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29nS

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