2N6800 MOSFET Transistor

The 2N6800 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6800 transistor as follows.

2N6800 Transistor Specification

Transistor Code		2N6800
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO205AF
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		34.8nC

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