2N6796 MOSFET Transistor

The 2N6796 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6796 transistor as follows.

2N6796 Transistor Specification

Transistor Code		2N6796
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO205AF
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		28.5nC

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