TSB1386CY PNP Transistor

The TSB1386CY is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the TSB1386CY transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TSB1386CY transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the TSB1386CY transistor as follows.

TSB1386CY Transistor Specification

Transistor Code		TSB1386CY
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	120MHz
Collector Capacitance	CC	60pF

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