TIPL761B NPN Transistor

The TIPL761B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the TIPL761B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TIPL761B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the TIPL761B transistor as follows.

TIPL761B Transistor Specification

Transistor Code		TIPL761B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	1100V
Collector-Emitter Voltage (Maximum)	VCE	1100V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	12MHz
Collector Capacitance	CC	110pF

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