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TI813 PNP Transistor

The TI813 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the TI813 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The TI813 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the TI813 transistor as follows.

Circuit diagram symbol of the TI813 transistor

TI813 Transistor Specification

Transistor Code TI813
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO89-3
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 40MHz
Collector Capacitance CC 5pF

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