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SS8050G NPN Transistor

The SS8050G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SS8050G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SS8050G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SS8050G transistor as follows.

Circuit diagram symbol of the SS8050G transistor

SS8050G Transistor Specification

Transistor Code SS8050G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 85
Transition Frequency FT 100MHz

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