SBCP56T1G NPN Transistor

The SBCP56T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SBCP56T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SBCP56T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SBCP56T1G transistor as follows.

SBCP56T1G Transistor Specification

Transistor Code		SBCP56T1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		BH
Collector Power Dissipation (Maximum)	PC	1.5W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	130MHz

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