SBC856BWT1G PNP Transistor

The SBC856BWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the SBC856BWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SBC856BWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the SBC856BWT1G transistor as follows.

SBC856BWT1G Transistor Specification

Transistor Code		SBC856BWT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT323
Transistor SMD Code		3F
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		220
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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