S876T NPN Transistor

The S876T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the S876T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The S876T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the S876T transistor as follows.

S876T Transistor Specification

Transistor Code		S876T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	110W
Collector-Base Voltage (Maximum)	VCB	1200V
Collector-Emitter Voltage (Maximum)	VCE	530V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	7MHz
Collector Capacitance	CC	150pF

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