RT3A66M PNP Transistor

The RT3A66M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the RT3A66M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The RT3A66M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the RT3A66M transistor as follows.

RT3A66M Transistor Specification

Transistor Code		RT3A66M
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-363
Transistor SMD Code		AHE
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	100MHz
Collector Capacitance	CC	2.8pF

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