PHPT60606NY NPN Transistor

The PHPT60606NY is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PHPT60606NY transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PHPT60606NY transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PHPT60606NY transistor as follows.

PHPT60606NY Transistor Specification

Transistor Code		PHPT60606NY
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT669
Transistor SMD Code		0606NAB
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	180MHz
Collector Capacitance	CC	23pF

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