PHE13009 NPN Transistor

The PHE13009 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PHE13009 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PHE13009 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PHE13009 transistor as follows.

PHE13009 Transistor Specification

Transistor Code		PHE13009
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220AB
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		8

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