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PBSS5540Z PNP Transistor

The PBSS5540Z is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5540Z transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5540Z transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5540Z transistor as follows.

Circuit diagram symbol of the PBSS5540Z transistor

PBSS5540Z Transistor Specification

Transistor Code PBSS5540Z
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT223
Transistor SMD Code PB5540
Collector Power Dissipation (Maximum) PC 1.35W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 250
Transition Frequency FT 60MHz
Collector Capacitance CC 105pF

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