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PBSS5480X PNP Transistor

The PBSS5480X is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5480X transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5480X transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5480X transistor as follows.

Circuit diagram symbol of the PBSS5480X transistor

PBSS5480X Transistor Specification

Transistor Code PBSS5480X
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT89
Transistor SMD Code *1Z
Collector Power Dissipation (Maximum) PC 0.55W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 90pF

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