PBSS4120T NPN Transistor

The PBSS4120T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4120T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4120T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4120T transistor as follows.

PBSS4120T Transistor Specification

Transistor Code		PBSS4120T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		*3B
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		350
Transition Frequency	FT	100MHz
Collector Capacitance	CC	20pF

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