The NUS5530MN is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NUS5530MN transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NUS5530MN transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the NUS5530MN transistor as follows.
| Transistor Code | NUS5530MN | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Silicon(SI) | |
| Package | DFN8 | |
| Transistor SMD Code | 5530 | |
| Collector Power Dissipation (Maximum) | PC | 2.75W |
| Collector-Base Voltage (Maximum) | VCB | 55V |
| Collector-Emitter Voltage (Maximum) | VCE | 35V |
| Collector Current (Maximum) | IC | 2A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 5V |
| Forward Current Transfer Ratio (hFE Value) | 100 | |
| Transition Frequency | FT | 100MHz |
| Collector Capacitance | CC | 85pF |
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