NSVT65010MW6T1G PNP Transistor

The NSVT65010MW6T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSVT65010MW6T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVT65010MW6T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSVT65010MW6T1G transistor as follows.

NSVT65010MW6T1G Transistor Specification

Transistor Code		NSVT65010MW6T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		4G
Collector Power Dissipation (Maximum)	PC	0.38W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		220
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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