NSVBCP56-10T3G NPN Transistor

The NSVBCP56-10T3G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVBCP56-10T3G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBCP56-10T3G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVBCP56-10T3G transistor as follows.

NSVBCP56-10T3G Transistor Specification

Transistor Code		NSVBCP56-10T3G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		BH-10
Collector Power Dissipation (Maximum)	PC	1.5W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		63
Transition Frequency	FT	130MHz

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