NSVBC846BM3T5G NPN Transistor

The NSVBC846BM3T5G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVBC846BM3T5G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBC846BM3T5G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVBC846BM3T5G transistor as follows.

NSVBC846BM3T5G Transistor Specification

Transistor Code		NSVBC846BM3T5G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT723
Transistor SMD Code		1B
Collector Power Dissipation (Maximum)	PC	0.27W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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