NSV9435T1G PNP Transistor

The NSV9435T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV9435T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV9435T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSV9435T1G transistor as follows.

NSV9435T1G Transistor Specification

Transistor Code		NSV9435T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		9435R
Collector Power Dissipation (Maximum)	PC	1.56W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	110MHz
Collector Capacitance	CC	100pF

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