NSV1C301ET4G NPN Transistor

The NSV1C301ET4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSV1C301ET4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV1C301ET4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSV1C301ET4G transistor as follows.

NSV1C301ET4G Transistor Specification

Transistor Code		NSV1C301ET4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Transistor SMD Code		1C31E
Collector Power Dissipation (Maximum)	PC	33W
Collector-Base Voltage (Maximum)	VCB	140V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	120MHz
Collector Capacitance	CC	30pF

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