The NSS60100DMT is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS60100DMT transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NSS60100DMT transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the NSS60100DMT transistor as follows.
| Transistor Code | NSS60100DMT | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Silicon(SI) | |
| Package | WDFN6 | |
| Transistor SMD Code | AP | |
| Collector Power Dissipation (Maximum) | PC | 2.27W |
| Collector-Base Voltage (Maximum) | VCB | 60V |
| Collector-Emitter Voltage (Maximum) | VCE | 60V |
| Collector Current (Maximum) | IC | 1A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 6V |
| Forward Current Transfer Ratio (hFE Value) | 90 | |
| Transition Frequency | FT | 155MHz |
| Collector Capacitance | CC | 18pF |
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